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Proceedings of the 7th National Conference on Functional Materials and Applications (FMA 2010 E-BOOK)

Changsha,China,10.16-10.18,2010

ISBN: 978-1-935068-41-9 Scientific Research Publishing, USA

E-Book 2313pp Pub. Date: October 2010

Category: Chemistry & Materials Science

Price: $360

Title: Synthesis and Characterization of S-Doped Black Silicon
Source: Proceedings of the 7th National Conference on Functional Materials and Applications (FMA 2010 E-BOOK) (pp 154-156)
Author(s): Bang-wu Liu, Key Laboratory of Microelectronics Devices & Integrated Technology,Institute of Microelectronics, Chniese Academy of Sciences, Beijing, China
Jie Liu, Key Laboratory of Microelectronics Devices & Integrated Technology,Institute of Microelectronics, Chniese Academy of Sciences, Beijing, China
Chao-bo Li, Key Laboratory of Microelectronics Devices & Integrated Technology,Institute of Microelectronics, Chniese Academy of Sciences, Beijing, China
Yang Xia, Key Laboratory of Microelectronics Devices & Integrated Technology,Institute of Microelectronics, Chniese Academy of Sciences, Beijing, China
Ming-gang Wang, Key Laboratory of Microelectronics Devices & Integrated Technology,Institute of Microelectronics, Chniese Academy of Sciences, Beijing, China
Wen-dong Wang, Key Laboratory of Microelectronics Devices & Integrated Technology,Institute of Microelectronics, Chniese Academy of Sciences, Beijing, China
Abstract: We present a new method to prepare the black silicon by plasma immersion ion implantation with low price and high efficiency. The black silicon was characterized by scanning electron microscopy (SEM), auger electron spectroscopy (AES) and UV-VIS-NIR spectrophotometer. SEM results showed that the black silicon appeared porous structure. The formation mechanism of porous black silicon by plasma immersion ion implantation has been discussed by AES results. AES results showed that there were about 0.5 at.% sulfur in the silicon lattice. The average reflectance of black silicon was below 8% in the visible region.
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