Proceedings of the 7th National Conference on Functional Materials and Applications (FMA 2010 E-BOOK)

Changsha,China,10.16-10.18,2010

ISBN: 978-1-935068-41-9 Scientific Research Publishing, USA

E-Book 2313pp Pub. Date: October 2010

Category: Chemistry & Materials Science

Price: $360

Title: The Analysis of Nanocrystalline for Nitrogen-Doped Diamond Films Preparations and Electrical Performance
Source: Proceedings of the 7th National Conference on Functional Materials and Applications (FMA 2010 E-BOOK) (pp 23-26)
Author(s): Ming-lei Wang, Mudanjiang Normal College Key Laboratory of New Carbon-based Functional and Super-hard Materials of Heilongjiang Province,Mudanjiang, china, 157012
Lei Yao, Mudanjiang Normal College Key Laboratory of New Carbon-based Functional and Super-hard Materials of Heilongjiang Province,Mudanjiang, china, 157012
Chang-shan Xue, Mudanjiang Normal College Key Laboratory of New Carbon-based Functional and Super-hard Materials of Heilongjiang Province,Mudanjiang, china, 157012
Yu-qiang Chen, Mudanjiang Normal College Key Laboratory of New Carbon-based Functional and Super-hard Materials of Heilongjiang Province,Mudanjiang, china, 157012
Hong-yan Peng, Mudanjiang Normal College Key Laboratory of New Carbon-based Functional and Super-hard Materials of Heilongjiang Province,Mudanjiang, china, 157012
Abstract: The nanocrystalline diamond films that prepared in CH4/N2/H2 mixtures are synthesized by DC hot-cathode PCVD system. The result shows that with the increasing of nitrogen flow rate, crystal refinement, grain boundary, dislocation and defects are increasing, the surface of films change from the larger micro-crystal particle to cauliflower-like structures, and the surface roughness of films get smaller correspondingly, the content of non-diamond carbon in the films increases. When the C: N = 1:1, the diamond films resistivity drop to 10-1Ω·cm,the carrier concentration is 1018cm-3. With the further increase of nitrogen flow rate, the film resistivity essentially unchanged
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